RC28F00BM29EWHA【PDF 71/75 页】IC FLASH 2GBIT 100NS 64FBGA

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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Program/Erase Characteristics

Program/Erase Characteristics

Table 33: Program/Erase Characteristics

Notes 1 and 2 apply to the entire table.

Buffer

Parameter

Block erase (128KB)

Erase suspend latency time

Block erase timeout

Size

–

–

–

Byte

–

–

–

Word

–

–

–

Min

–

–

50

Typ

0.8

27

–

Max

4

32

–

Unit

s

μs

μs

Notes

Byte program

Word program

Single-byte program

Byte write to buffer program

Effective write to buffer

program per byte

Single-word program

Word write to buffer program

Effective write to buffer

program per word

–

64

128

256

64

128

256

–

32

64

128

256

512

32

64

128

256

512

–

64

128

256

1

1

1

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

32

64

128

256

512

1

1

1

1

1

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

210

270

310

375

4.22

2.42

1.46

210

270

310

375

505

900

8.44

4.84

2.93

1.97

1.76

456

716

900

1140

11.2

7

4.45

456

716

900

1140

1690

3016

22.4

14.1

8.9

6.6

5.89

μs

μs

μs

μs

μs

μs

μs

μs

μs

μs

μs

μs

μs

μs

μs

μs

μs

μs

Program suspend latency time

Blank check

PROGRAM/ERASE cycles (per block)

–

–

–

–

–

–

–

–

–

–

–

100,000

27

3.2

–

32

–

–

μs

ms

cycles

Erase to suspend

–

–

–

–

500

–

μs

3

Notes:

1. Typical values measured at room temperature and nominal voltages.

2. Typical and maximum values are sampled, but not 100% tested.

3. Erase to suspend is the typical time between an initial BLOCK ERASE or ERASE RESUME

command and a subsequent ERASE SUSPEND command. Violating the specification re-

peatedly during any particular block erase may cause erase failures.

PDF: 09005aef849b4b09

m29ew_256mb_2gb.pdf - Rev. B 8/12 EN

71

Micron Technology, Inc. reserves the right to change products or specifications without notice.

? 2012 Micron Technology, Inc. All rights reserved.

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